Solid state imaging element, production method thereof and electronic device

ABSTRACT

There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/597,738, filed Jan. 15, 2015, which claims priority to JapanesePriority Patent Application JP 2014-009181, filed Jan. 22, 2014, theentire contents of which are hereby incorporated herein by reference.

BACKGROUND

The present disclosure relates to a solid state image sensor, aproduction method thereof and an electronic device. More particularly,the present disclosure relates to a solid state imaging element, aproduction method thereof and an electronic device providing improveddevice properties.

SUMMARY

In the related art, in an electronic device having an image capturingfunction such as a digital still camera and a digital video camera, asolid state imaging element such as a Charge Coupled Device (CCD) and aComplementary Metal Oxide Semiconductor (CMOS) image sensor is used. Thesolid state imaging element has a pixel where photodiode (PD) forphotoelectric conversion and a plurality of transistor are combined. Aplurality of pixels are disposed planarly and output pixel signals.Based on the pixel signals, images are constructed.

In recent years, the solid state imaging element where photoelectricconversion units in green, blue and red colors are laminated in a depthdirection of the same pixel has been developed.

For example, Japanese Patent Application Laid-open No. 2011-29337discloses a solid state imaging element including a photoelectricallyconversion unit for photoelectrically converting blue light and aphotoelectrically conversion unit for photoelectrically converting redlight, both are formed in a depth direction of a silicon substrate; andan organic photoelectrically conversion layer for photoelectricallyconverting green light disposed on a surface upper layer of the siliconsubstrate. The solid state imaging element can improve sensitivityproperty since no color filter light loss is induced. Also, the solidstate imaging element can avoid false color generation since nointerpolation processing between pixels is performed.

It is known that orientations of organic molecules in the organicphotoelectrically conversion layer significantly affect electronphysical properties such as absorbance, mobility and ionization energy.It is important to control the orientations in order to improve thedevice properties.

For example, Japanese Patent Application Laid-open No. 2007-103921discloses a semiconductor device where a polymer compound containinglayer is laminated, the polymer compound has a structure such that anorganic semiconductor layer having high crystallinity and orientation.

In addition, Japanese Patent Application Laid-open No. 2005-32774discloses an organic thin film transistor having a threshold voltagecontrol film formed of a predetermined compound disposed between a gateinsulation film and an organic semiconductor thin film so that athreshold voltage can be easily controlled.

The solid state imaging element having the organic photoelectricallyconversion layer disclosed in Japanese Patent Application Laid-open No.2011-29337 has a structure that the organic photoelectrically conversionlayer is formed on a flat surface of a transparent electrode and aninsulation film. As described above, it is known that the orientationsof organic molecules in the organic photoelectrically conversion layersignificantly affect electron physical properties such as absorbance,mobility and ionization energy. When the orientations are controlled,the device properties can be improved.

However, the orientations of organic molecules in the organicphotoelectrically conversion layer formed on the flat surface of thetransparent electrode and the insulation film are not controlled in therelated art. There is a need to improve the device properties bycontrolling the orientations.

In view of the circumstances as described above, it is desirable thatthe device properties are improved.

According to an embodiment of the present disclosure, there is provideda solid state imaging element, including:

an insulation film laminated on a semiconductor substrate;

a lower transparent electrode film formed and separated by theinsulation film per pixel;

a hydrophobic treatment layer laminated on a flat surface of theinsulation film and the lower transparent electrode film;

an organic photoelectric conversion layer laminated on the hydrophobictreatment layer; and

an upper transparent electrode film laminated on the organicphotoelectric conversion layer.

According to an embodiment of the present disclosure, there is provideda method of producing a solid state imaging element, including:

laminating an insulation film on a semiconductor substrate;

forming a lower transparent electrode film separated by the insulationfilm per pixel;

laminating a hydrophobic treatment layer on a flat surface of theinsulation film and the lower transparent electrode film;

laminating an organic photoelectric conversion layer on the hydrophobictreatment layer; and

laminating an upper transparent electrode film on the organicphotoelectric conversion layer.

According to an embodiment of the present disclosure, there is providedan electronic device having a solid state imaging element, including:

an insulation film laminated on a semiconductor substrate;

a lower transparent electrode film formed and separated by theinsulation film per pixel;

a hydrophobic treatment layer laminated on a flat surface of theinsulation film and the lower transparent electrode film;

an organic photoelectric conversion layer laminated on the hydrophobictreatment layer; and

an upper transparent electrode film laminated on the organicphotoelectric conversion layer.

In other words, according to an embodiment of the present disclosure, aninsulation film is laminated on a semiconductor substrate, a lowertransparent electrode film is formed and separated by the insulationfilm per pixel, a hydrophobic treatment layer laminated on a flatsurface of the insulation film and the lower transparent electrode film.An organic photoelectric conversion layer is laminated on thehydrophobic treatment layer and an upper transparent electrode film islaminated on the organic photoelectric conversion layer.

According to an embodiment of the present disclosure, the deviceproperties can be improved.

These and other objects, features and advantages of the presentdisclosure will become more apparent in light of the following detaileddescription of best mode embodiments thereof, as illustrated in theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram showing an illustrative configuration of a solidstate imaging element according to a first embodiment of the presentdisclosure;

FIG. 2 is a diagram illustrating a surface treatment for forming ahydrophobic treatment layer;

FIG. 3 is a diagram illustrating a crystal orientation status of anorganic vapor deposition film;

FIG. 4 is a diagram illustrating a method of producing the solid stateimaging element;

FIG. 5 is a diagram showing an illustrative configuration of a solidstate imaging element according to a second embodiment; and

FIG. 6 is a block diagram showing an illustrative configuration of anelectronic device.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, an embodiment of the present disclosure will be describedwith reference to the drawings.

FIG. 1 is a diagram showing an illustrative configuration of a solidstate imaging element according to a first embodiment of the presentdisclosure.

FIG. 1 shows a partial sectional structure of one pixel in a solid stateimaging element 11. Hereinafter, a face in an upper side is defined asan upper face and a face in a lower side is defined as a lower face, asappropriate in FIG. 1.

The solid state imaging element 11 is composed of a semiconductorsubstrate 12, an insulation film 13, a hydrophobic treatment layer 14,an organic photoelectric conversion layer 15 and an upper transparentelectrode film 16 which are laminated from a bottom. In the solid stateimaging element 11, photoelectric conversion areas 17 and 18 are formedin the semiconductor substrate 12, and a lower transparent electrodefilm 19 is formed in contact with the organic photoelectric conversionlayer 15 via the hydrophobic treatment layer 14.

The semiconductor substrate 12 is a silicon wafer provided by slicingthinly a high purity silicon monocrystal, for example.

The insulation film 13 is formed of an oxide film having an insulationproperty and is laminated on the upper face of the semiconductorsubstrate 12.

The hydrophobic treatment layer 14 is formed by performing a surfacetreatment of upper faces of the insulation film 13 and the lowertransparent electrode film 19 with a silylation agent. For example, whenhexamethyl silazane (HMDS) is used as the silylation agent for formingthe hydrophobic treatment layer 14, an HMDS layer is formed. The surfacetreatment thereof is described later referring to FIG. 2.

The organic photoelectric conversion layer 15 is formed by depositingquinacridone using a vacuum vapor deposition method on an upper face ofthe hydrophobic treatment layer 14. For example, the organicphotoelectric conversion layer 15 photoelectrically converts greenlight.

The upper transparent electrode film 16 is formed by laminating aconductive transparent material such as an indium tin oxide (ITO) filmon an upper face of the organic photoelectric conversion layer 15.

The photoelectric conversion areas 17 and 18 are composed of P—Njunction within the semiconductor substrate 12 and photoelectricallyconvert received light. In the illustrative configuration shown in FIG.1, the photoelectric conversion area 17 is disposed at a position deeperthan the photoelectric conversion area 18. For example, thephotoelectric conversion area 17 photoelectrically converts red lightand the photoelectric conversion area 18 photoelectrically converts bluelight.

The lower transparent electrode film 19 is separated by the insulationfilm 13 per pixel and is formed in contact with a lower face of theorganic photoelectric conversion layer 15 via the hydrophobic treatmentlayer 14. The lower transparent electrode film 19 is formed of aconductive transparent material such as an ITO film similar to the uppertransparent electrode film 16. The lower transparent electrode film 19is connected to a transfer transistor (not shown) and is used fortransferring electric charges photoelectrically converted by the organicphotoelectric conversion layer 15 disposed between the lower transparentelectrode film 19 and the upper transparent electrode film 16.

The solid state imaging element 11 is configured in this manner. Afterthe hydrophobic treatment layer 14 is formed on a flat surface of theinsulation film 13 and the lower transparent electrode film 19, theorganic photoelectric conversion layer 15 is formed, which allows anorientation property of the organic photoelectric conversion layer 15 tobe controlled.

Next, referring to FIG. 2, the surface treatment for forming thehydrophobic treatment layer 14 is described.

The hydrophobic treatment layer 14 is formed by performing the surfacetreatment using a silylation agent on the insulation layer 13 and thelower transparent electrode film 19. Although only the insulation film13 is shown in FIG. 2, the similar surface treatment is performed on thelower transparent electrode film 19 as well.

A surface of the insulation film 13 has hydrophilicity. Before anorganic vapor deposition treatment for forming the organic photoelectricconversion layer 15 is performed, the surface treatment (a hydrophobictreatment) by the silylation agent is performed on the surface of theinsulation film 13. Examples of the silylation agent used in the surfacetreatment include the above-described HDMS [Si(CH₃)₃)₂NH] as well as1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH₃)₂]₂NH],N-trimethylsilyldimethylamine (TMSDMA, (CH₃)₅NSi),N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS).

The surface treatment is performed using the silylation agent to formthe hydrophobic treatment layer 14 on the surface of the insulation film13. As shown in a lower section of FIG. 2, the organic photoelectricconversion layer 15 having hydrophobicity is formed on the hydrophobictreatment layer 14 having hydrophobicity. In this manner, adhesionbetween the organic photoelectric conversion layer 15 and the insulationfilm 13/the lower transparent electrode film 19 can be improved and theorganic photoelectric conversion layer 15 can be inhibited from peeling.

The organic photoelectric conversion layer 15 thus formed can becontrolled to have a suitable crystal orientation status, i.e., anorientation status in parallel with (face-on) the substrate.

Referring to FIG. 3, the crystal orientation status of the organic vapordeposition film used for the organic photoelectric conversion layer 15is described.

FIG. 3A shows a molecular structure and a C axis direction of aquinacridone (QD) molecule constituting the organic vapor depositionfilm used for the organic photoelectric conversion layer 15.

As shown in FIG. 3B, when no surface treatment by the silylation agentis performed, the organic vapor deposition film is formed to have theorientation status such that the C axis of the quinacridone molecule isalmost perpendicular to a film surface. At this time, the organic vapordeposition film shows a trend that a peak at 6 degrees in an X raydiffraction is strong and a peeling strength becomes low.

In contrast, when the surface treatment by the silylation agent isperformed, the organic vapor deposition film is formed to have theorientation status such that the C axis of the quinacridone molecule isalmost in parallel with the film surface. At this time, the organicvapor deposition film shows a trend that a peak at 6 degrees in an X raydiffraction is weak (or no peak is provided) and a peeling strengthbecomes high.

Depending on the extent of the surface treatment by the silylationagent, the organic vapor deposition film can be formed to have theorientation status such that the C axis of the quinacridone molecule isoriented randomly to the film surface. At this time, the organic vapordeposition film shows a trend that a peak at 6 degrees in an X raydiffraction is weak.

As described above, in the solid state imaging element 11, thehydrophobic treatment layer 14 is formed by performing the surfacetreatment of the upper faces of the insulation film 13 and the lowertransparent electrode film 19 with a silylation agent. The organicphotoelectric conversion layer 15 formed on the hydrophobic treatmentlayer 14 can be controlled for the orientation property to have thesuitable crystal orientation status. In this manner, the orientationproperty of the organic photoelectric conversion layer 15 is controlled,thereby improving device properties (such as a conversion efficiency,adhesion properties and electronic properties) of the solid stateimaging element 11.

Referring to FIG. 4, a method of producing the solid state imagingelement 11 is described.

In a first step, the insulation film 13 is formed on the semiconductorsubstrate 12 in which the photoelectric conversion areas 17 and 18 areformed shown in FIG. 1 and the lower transparent electrode film 19 isformed corresponding to an area where the pixel is formed.

ITO having a film thickness of 50 to 200 nm is used for the lowertransparent electrode film 19, for example. Also, other than ITO, tinoxide (TO), a tin oxide based material to which a dopant is added, or azinc oxide (SnO₂) based material provided by adding a dopant to zincoxide (ZnO) may be used. Specific examples of a zinc oxide basedmaterial include aluminum zinc oxide (AZO) to which aluminum (Al) isadded as a dopant, gallium zinc oxide to which gallium (Ga) is added andindium zinc oxide to which indium (In) is added. In addition to these,IGZO, CuI, InSbO₄, ZnMgO, CuInO₂, MgIN₂O₄, CdO or ZnSnO₃ may be used.

Next, in a second step, the hydrophobic treatment layer 14 is formed byperforming a silylation treatment to the upper faces of the insulationfilm 13 and the lower transparent electrode film 19. Any layer otherthan the HMDS layer may be used for the hydrophobic treatment layer 14.A formation method is not especially limited. For example, a gas phasemethod such as a CVD method or a liquid phase method such as a spincoating method and a dipping method may be used. A film thickness of thehydrophobic treatment layer 14 can be about one molecular layer, e.g.,suitably less than 1 nm.

Thereafter, in a third step, the organic photoelectric conversion layer15 is formed. The organic photoelectric conversion layer 15 can have alaminated structure of a multilayer organic film, e.g., p, i, n layer orback and forth thereof sandwiched by buffer layers. The organic film mayinclude one or more film selected from the group consisting of: organiclow molecules such as pentacene and oligothiophene, organic highmolecules such as polychiophene, a metal complex such as phthalocyanine,fullerenes such as C60, C70 and endohedral metallofullerene, and carbonnanotubes.

In a fourth step, the upper transparent electrode film 16 is formed onthe upper face of the organic photoelectric conversion layer 15. Theupper transparent electrode film 16 is formed of the material similar tothe above-described lower transparent electrode film 19.

By the production method as described above, the solid state imagingelement 11 can be produced.

Next, FIG. 5 is a diagram showing an illustrative configuration of thesolid state imaging element 11 according to a second embodiment.

As shown in FIG. 5, a solid state imaging element 11A has a structuredifferent from the solid state imaging element 11 shown in FIG. 1 inthat an inorganic buffer layer 20 is disposed between the hydrophobictreatment layer 14 and the insulation layer 13/the lower transparentelectrode film 19. The solid state imaging element 11A has the structuresimilar to the solid state imaging element 11 shown in FIG. 1 otherwise.Therefore, common structural elements are denoted by the same referencenumerals, and thus detailed description thereof will be hereinafteromitted.

In the solid state imaging element 11A, after the inorganic buffer layer20 is formed on the upper surface of the insulation film 13 and thelower transparent electrode film 19, the hydrophobic treatment isperformed using the silylation agent to form the hydrophobic treatmentlayer 14 and the organic vapor deposition treatment is performed to formthe organic photoelectric conversion layer 15. As the inorganic bufferlayer 20, titanium oxide (TiO₂), tantalum pentoxide (Ta₂O₅) or zincoxide (ZnO) can be used.

By disposing the inorganic buffer layer 20, in the solid state imagingelement 11A, adhesion between the organic photoelectric conversion layer15 and the lower transparent electrode film 19 can be further improved.In the organic photoelectric conversion layer 15, the dark current issuppressed from being generated.

The solid state imaging element 11 in the above-described embodimentscan be applied to a variety of electronic devices such as an imagecapturing system such as a digital still camera and a digital videocamera; a mobile phone having an image capturing function; or otherdevices each having an image capturing function.

FIG. 6 is a block diagram showing an illustrative configuration of anelectronic device mounted to an electronic device.

As shown in FIG. 6, an image capturing apparatus 101 is composed of anoptical system 102, an image capturing element 103, a signal processingcircuit 104, a monitor 105 and a memory 106 and can capture a stillimage and a moving image.

The optical system 102 is composed of one or more lenses, guides imagelight (incident light) from a subject to the image capturing element103, and forms an image on a light receiving surface (sensor unit) ofthe image capturing element 103.

To the image capturing element 103, the solid state imaging element 11in the above-described embodiments is applied. Electrons are accumulatedin the image capturing element 103 for a certain period of timecorresponding to the image formed on the light receiving surface via theoptical system 102. A signal corresponding to the electrons accumulatedon the image capturing element 103 is fed to the signal processingcircuit 104.

The signal processing circuit 104 performs a variety of signalprocessing to the pixel signal outputted from the image capturingelement 103. The image (image data) provided by performing the signalprocessing by the signal processing circuit 104 is supplied to anddisplayed on the monitor 105 or supplied to and stored (recorded) on thememory 106.

When the solid state imaging element 11 in the above-describedembodiments is applied to the image capturing apparatus 101 configuredin this manner, an image having a higher image quality can be provided,for example.

The present disclosure may have the following configurations.

(1) A solid state imaging element, including:

an insulation film laminated on a semiconductor substrate;

a lower transparent electrode film formed and separated by theinsulation film per pixel;

a hydrophobic treatment layer laminated on a flat surface of theinsulation film and the lower transparent electrode film;

an organic photoelectric conversion layer laminated on the hydrophobictreatment layer; and

an upper transparent electrode film laminated on the organicphotoelectric conversion layer.

(2) The solid state imaging element according to (1) above, in which

the hydrophobic treatment layer is formed by performing a surfacetreatment of surfaces of the insulation film and the lower transparentelectrode film with a silylation agent.

(3) The solid state imaging element according to (2) above, in which

hexamethyl silazane is used as the silylation agent used in the surfacetreatment for forming the hydrophobic treatment layer.

(4) The solid state imaging element according to (2) above, in which

one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH₃)₂]₂NH],N-trimethylsilyldimethylamine (TMSDMA, (CH₃)₅NSi),N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylationagent used in the surface treatment for forming the hydrophobictreatment layer.

(5) The solid state imaging element according to any one of (1) to (4)above, in which

an inorganic buffer layer is disposed between the hydrophobic treatmentlayer and the insulation layer and the lower transparent electrode film.

(6) A method of producing a solid state imaging element, including:

laminating an insulation film on a semiconductor substrate;

forming a lower transparent electrode film separated by the insulationfilm per pixel;

laminating a hydrophobic treatment layer on a flat surface of theinsulation film and the lower transparent electrode film;

laminating an organic photoelectric conversion layer on the hydrophobictreatment layer; and

laminating an upper transparent electrode film on the organicphotoelectric conversion layer.

(7) The method of producing a solid state imaging element according to(6) above, in which

the hydrophobic treatment layer is formed by performing a surfacetreatment of surfaces of the insulation film and the lower transparentelectrode film 19 with a silylation agent.

(8) The method of producing a solid state imaging element according to(7) above, in which

hexamethyl silazane is used as the silylation agent used in the surfacetreatment for forming the hydrophobic treatment layer.

(9) The method of producing a solid state imaging element according to(7) above, in which

one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH₃)₂]₂NH],N-trimethylsilyldimethylamine (TMSDMA, (CH₃)₅NSi),N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylationagent used in the surface treatment for forming the hydrophobictreatment layer.

(10) The method of producing a solid state imaging element according toany one of (6) to (9) above, in which

an inorganic buffer layer is disposed between the hydrophobic treatmentlayer and the insulation layer and the lower transparent electrode film.

(11) An electronic device having a solid state imaging element,including:

an insulation film laminated on a semiconductor substrate;

a lower transparent electrode film formed and separated by theinsulation film per pixel;

a hydrophobic treatment layer laminated on a flat surface of theinsulation film and the lower transparent electrode film;

an organic photoelectric conversion layer laminated on the hydrophobictreatment layer; and

an upper transparent electrode film laminated on the organicphotoelectric conversion layer.

(12) The electronic device according to (11) above, in which

the hydrophobic treatment layer is formed by performing a surfacetreatment of surfaces of the insulation film and the lower transparentelectrode film with a silylation agent.

(13) The electronic device according to (12) above, in which

hexamethyl silazane is used as the silylation agent used in the surfacetreatment for forming the hydrophobic treatment layer.

(14) The electronic device according to (12) above, in which

one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH₃)₂]₂NH],N-trimethylsilyldimethylamine (TMSDMA, (CH₃)₅NSi),N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylationagent used in the surface treatment for forming the hydrophobictreatment layer.

(5) The electronic device according to any one of (11) to (14) above, inwhich

an inorganic buffer layer is disposed between the hydrophobic treatmentlayer and the insulation layer and the lower transparent electrode film.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. An imaging element, comprising: an insulationfilm laminated on a semiconductor substrate; a lower transparentelectrode film formed and separated by the insulation film per pixel; ahydrophobic treatment layer disposed on an inorganic buffer layer; anorganic photoelectric conversion layer laminated on the hydrophobictreatment layer; and an upper transparent electrode film laminated onthe organic photoelectric conversion layer, wherein the organicphotoelectric conversion layer is formed to have an orientation statussuch that a C axis is almost in parallel with a surface of the lowertransparent electrode film and a surface of the insulation film.
 2. Theimaging element according to claim 1, wherein the hydrophobic treatmentlayer is formed by performing a surface treatment of surfaces of theinorganic buffer layer with a silylation agent.
 3. The imaging elementaccording to claim 2, wherein hexamethyl silazane is used as thesilylation agent used in the surface treatment for forming thehydrophobic treatment layer.
 4. The imaging element according to claim2, wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH₃)₂]₂NH],N-trimethylsilyldimethylamine (TMSDMA, (CH₃)₅NSi),N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylationagent used in the surface treatment for forming the hydrophobictreatment layer.
 5. The imaging element according to claim 1, whereinthe inorganic buffer layer is disposed on the surface of the insulationfilm and the lower transparent electrode film.
 6. A method of producingan imaging element, comprising: laminating an insulation film on asemiconductor substrate; forming a lower transparent electrode filmseparated by the insulation film per pixel; forming an inorganic bufferlayer on a surface of the insulation film and the lower transparentelectrode film; forming a hydrophobic treatment layer on the inorganicbuffer layer; laminating an organic photoelectric conversion layer onthe hydrophobic treatment layer; and laminating an upper transparentelectrode film on the organic photoelectric conversion layer wherein theorganic photoelectric conversion layer is formed to have an orientationstatus such that an C axis is almost in parallel with the lowertransparent electrode film surface and the insulation film surface. 7.The method of producing the imaging element according to claim 6,wherein the hydrophobic treatment layer is formed by performing asurface treatment of surfaces of the inorganic buffer layer with asilylation agent.
 8. The method of producing the imaging elementaccording to claim 7, wherein hexamethyl silazane is used as thesilylation agent used in the surface treatment for forming thehydrophobic treatment layer.
 9. The method of producing the imagingelement according to claim 7, wherein one of 1,1,3,3-tetramethyldisilazane [TMDS, [SiH(CH₃)₂]₂NH], N-trimethylsilyldimethylamine(TMSDMA, (CH₃)₅NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylationagent used in the surface treatment for forming the hydrophobictreatment layer.
 10. The method of producing the imaging elementaccording to claim 7, wherein the inorganic buffer layer is disposed onthe surface of the insulation film and the lower transparent electrodefilm.
 11. An electronic device having an imaging element, comprising: aninsulation film laminated on a semiconductor substrate; a lowertransparent electrode film formed and separated by the insulation filmper pixel; an inorganic buffer layer disposed on a surface of theinsulation film and the lower transparent electrode film; a hydrophobictreatment layer disposed on the inorganic buffer layer; an organicphotoelectric conversion layer laminated on the hydrophobic treatmentlayer; and an upper transparent electrode film laminated on the organicphotoelectric conversion layer, wherein the organic photoelectricconversion layer is formed to have an orientation status such that an Caxis is almost in parallel with the lower transparent electrode filmsurface and the insulation film surface.
 12. The electronic deviceaccording to claim 11, wherein the hydrophobic treatment layer is formedby performing a surface treatment of surfaces of the inorganic bufferlayer with a silylation agent.
 13. The electronic device according toclaim 12, wherein hexamethyl silazane is used as the silylation agentused in the surface treatment for forming the hydrophobic treatmentlayer.
 14. The electronic device according to claim 12, wherein one of1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH₃)₂]₂NH],N-trimethylsilyldimethylamine (TMSDMA, (CH₃)₅NSi),N-dimethylsilyldimethylamine (DMSDMA, (CH₃)₄NHSi),1-trimethylsilylpyrole (TMS pyrole),N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) andbis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylationagent used in the surface treatment for forming the hydrophobictreatment layer.
 15. The electronic device according to claim 11,wherein the inorganic buffer layer disposed on the surface of theinsulation film and the lower transparent electrode film.